Design and optimization of a W-band extended interaction klystron amplifier

Author

Zaojin Zeng ; Zhou Lin ; Li Wenjun ; Chen Hongbin

Author_Institution

Inst. of Appl. Electron., China Acad. of Eng. Phys., Mianyang, China

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

2

Abstract

A three dimension high frequency circuit of an W band extended interaction klystron amplifier (EIA) is designed. With an electron beam of 17 kV and 0.34 A, and an input microwave power of 30 mW at 94.77 GHz, an average power of 580 W with power conversion efficiency of 10.03% , gain of 42.6 dB, 3dB Instantaneous bandwidth of more than 150 MHz is obtained. However, a peak output power of 50 mW is obtained by experiment. Based on the experiment result, optical system and RF circuit are optimized. Via optimization, a beam transmission of 100% is achieved, and with an electron beam of 18 kV and 0.28 A, and an input microwave power of 30 mW at 94.95 GHz, an average power of 374 W is obtained.

Keywords

electron beams; klystrons; millimetre wave amplifiers; RF circuit; W-band EIA; W-band extended interaction klystron amplifier; current 0.28 A; current 0.34 A; efficiency 10.03 percent; frequency 94.77 GHz; frequency 94.95 GHz; gain 42.6 dB; instantaneous bandwidth; microwave power; optical system; power 30 mW; power 374 W; power 50 mW; power 580 W; power conversion efficiency; three dimension high frequency circuit electron beam; voltage 17 kV; voltage 18 kV; Cavity resonators; Electron optics; Integrated optics; Klystrons; Microwave circuits; Optimization; Power generation; PIC simulation; W-band; extended interaction klystron; high frequency circuit; optical system;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference (IVEC), 2015 IEEE International

Conference_Location

Beijing

Print_ISBN

978-1-4799-7109-1

Type

conf

DOI

10.1109/IVEC.2015.7224048

Filename

7224048