Title :
Polarization-independent waveguide modulators using 1.57 /spl mu/m-strained InGaAs-InGaAsP quantum wells
Author :
Bartolo, R.E. ; Saini, S.S. ; Ren, T. ; Zhu, Y. ; Dagenais, M. ; Shen, H. ; Pamulapati, J. ; Zhou, W. ; King, O. ; Johnson, F.G.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., Baltimore, MD, USA
Abstract :
Summary form only given. The performance of multiple quantum well (MQW) electroabsorption (EA) waveguide modulators based on the quantum confined Stark effect (QCSE) shows considerable promise due to the low drive voltage, enhanced excitonic absorption, and high-speed operation. Our approach uses a unique quantum well design that incorporates two thin highly tensile strained GaAs-strain layers in order to provide separate confinement, and effective well widths denoted L/sub lh/ and L/sub hh/, for the LH1 and HH1 wavefunctions respectively. This design maintains the degeneracy of the LH1 and HH1 energy levels, for polarization independent transmission, for potentially larger values of the electric field as compared to other approaches.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; excitons; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; light polarisation; optical waveguides; quantum confined Stark effect; semiconductor quantum wells; 1.57 mum; InGaAs-InGaAsP; MQW electroabsorption waveguide modulators; QCSE; effective well widths; electric field; enhanced excitonic absorption; high-speed operation; low drive voltage; multiple quantum well; polarization independent transmission; polarization-independent waveguide modulators; quantum confined Stark effect; separate confinement; strained InGaAs-InGaAsP quantum wells; thin highly tensile strained GaAs-strain layers; unique quantum well design; wavefunctions; Etching; High speed optical techniques; Indium gallium arsenide; Optical fiber polarization; Optical sensors; Optical waveguides; Quantum well devices; Silicon; Tellurium; USA Councils;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834076
