Development of intermediate band solar cell based on ZnTe1−xOx synthesized by oxygen ion implantation

Author

Tanaka, T. ; Yu, K.M. ; Levander, A.X. ; Dubon, O.D. ; Reichertz, L.A. ; Lopez, N. ; Nishio, M. ; Walukiewicz, W.

Author_Institution

Dept. of Electr. & Electron. Eng., Saga Univ., Saga, Japan

fYear

2011

fDate

19-24 June 2011

Abstract

Optical properties of ZnTe_1-xO_x (ZnTeO) and evidence for the photovoltaic (PV) activity of a ZnTeO intermediate band solar cell (IBSC) are reported. Electron transitions from the intermediate band to the conduction band were observed by photomodulated reflectance measurements. The optical absorption coefficients for the electron transition from the valence band to the intermediate band exceeds 2 × 10⁴ cm^-1, suitable for thin film PV device applications. The ZnTeO IBSC exhibits an enhanced spectral response below the bandedge of ZnTe, and all results are consistent with the proposed conversion mechanism of IBSC.

Keywords

II-VI semiconductors; conduction bands; ion implantation; light absorption; reflectivity; semiconductor thin films; solar cells; tellurium compounds; valence bands; zinc compounds; IBSC; PV activity; ZnTe_1-xO_x; conduction band; electron transition; enhanced spectral response; intermediate band solar cell; optical absorption coefficient; optical properties; oxygen ion implantation; photomodulated reflectance measurement; photovoltaic activity; thin-film PV device applications; valence band; Absorption; Electron optics; Lighting; Optical films; Optical reflection; Photonics; Photovoltaic cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186368

Filename

6186368