Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications

Author

Inumiya, S. ; Sekine, K. ; Niwa, S. ; Kaneko, A. ; Sato, M. ; Watanabe, T. ; Fukui, H. ; Kamata, Y. ; Koyama, Masanori ; Nishiyama, A. ; Takayanagi, M. ; Eguchi, K. ; Tsunashima, Y.

Author_Institution

Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan

fYear

2003

fDate

10-12 June 2003

Firstpage

17

Lastpage

18

Abstract

Fabrication process of HfSiON gate dielectrics by plasma oxidation of CVD Hf silicate followed by plasma nitridation was developed. Thanks to the high quality ultrathin interfacial layer formed by internal plasma oxidation, electron mobility of 240 cm/sup 2//Vs@0.8 MV/cm (85% of SiO/sub 2/) and hole mobility of 73 cm/sup 2//Vs@0.5 MV/cm (93% of SiON) were successfully achieved. The developed process will be promising for the production of low power CMOS devices in the near future.

Keywords

CVD coatings; MOS capacitors; MOSFET; dielectric materials; dielectric thin films; electron mobility; hafnium compounds; hole mobility; nitridation; oxidation; plasma materials processing; 65 nm; CMOS applications; CVD; Hf silicate; HfSiON; HfSiON gate dielectrics; electron mobility; hole mobility; nitridation; plasma oxidation; CMOS process; Dielectrics; Fabrication; Hafnium; Nitrogen; Oxidation; Plasma applications; Plasma materials processing; Plasma properties; Plasma stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221064

Filename

1221064