• DocumentCode
    1866313
  • Title

    GaN near-UV microdisk lasers: efficient pumping configuration and low lasing threshold

  • Author

    Seongsik Chang ; Rex, N.B. ; Chang, R.K. ; Gabel Chong ; Guido, Louis J.

  • Author_Institution
    Dept. of Appl. Phys., Yale Univ., New Haven, CT, USA
  • fYear
    1999
  • fDate
    28-28 May 1999
  • Firstpage
    204
  • Lastpage
    205
  • Abstract
    Summary form only given. Shape deformation of a whispering gallery mode (WGM) microdisk laser was recently proposed and demonstrated to achieve high-power directional emission. Here, we demonstrate the first optically pumped, near-UV microdisk gallium nitride (GaN) laser. By using judicious pumping geometry, the lasing threshold was reduced to 60 kW/cm/sup 2/, which is an order of magnitude lower than previously reported for a conventional Fabry-Perot cavity structure. The pumping configuration is as important as the cavity structure in the design of low threshold lasers.
  • Keywords
    III-V semiconductors; gallium compounds; laser modes; microcavity lasers; optical design techniques; optical pumping; semiconductor lasers; GaN; GaN near-UV microdisk lasers; cavity structure; efficient pumping configuration; high-power directional emission; lasing threshold; low lasing threshold; low threshold laser design; near-UV microdisk GaN laser; optically pumped; pumping configuration; pumping geometry; shape deformation; whispering gallery mode; Gallium nitride; Geometrical optics; III-V semiconductor materials; Laser excitation; Laser modes; Optical pumping; Pump lasers; Shape; Stimulated emission; Whispering gallery modes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    1-55752-595-1
  • Type

    conf

  • DOI
    10.1109/CLEO.1999.834085
  • Filename
    834085