DocumentCode :
1866313
Title :
GaN near-UV microdisk lasers: efficient pumping configuration and low lasing threshold
Author :
Seongsik Chang ; Rex, N.B. ; Chang, R.K. ; Gabel Chong ; Guido, Louis J.
Author_Institution :
Dept. of Appl. Phys., Yale Univ., New Haven, CT, USA
fYear :
1999
fDate :
28-28 May 1999
Firstpage :
204
Lastpage :
205
Abstract :
Summary form only given. Shape deformation of a whispering gallery mode (WGM) microdisk laser was recently proposed and demonstrated to achieve high-power directional emission. Here, we demonstrate the first optically pumped, near-UV microdisk gallium nitride (GaN) laser. By using judicious pumping geometry, the lasing threshold was reduced to 60 kW/cm/sup 2/, which is an order of magnitude lower than previously reported for a conventional Fabry-Perot cavity structure. The pumping configuration is as important as the cavity structure in the design of low threshold lasers.
Keywords :
III-V semiconductors; gallium compounds; laser modes; microcavity lasers; optical design techniques; optical pumping; semiconductor lasers; GaN; GaN near-UV microdisk lasers; cavity structure; efficient pumping configuration; high-power directional emission; lasing threshold; low lasing threshold; low threshold laser design; near-UV microdisk GaN laser; optically pumped; pumping configuration; pumping geometry; shape deformation; whispering gallery mode; Gallium nitride; Geometrical optics; III-V semiconductor materials; Laser excitation; Laser modes; Optical pumping; Pump lasers; Shape; Stimulated emission; Whispering gallery modes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
Type :
conf
DOI :
10.1109/CLEO.1999.834085
Filename :
834085
Link To Document :
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