Title :
Integration of 10 Gb/sec silicon lateral trench photodetector with high-performance CMOS
Author :
Yang, M. ; Schaub, J.D. ; Rogers, D.L. ; Griesemer, J.A. ; Boyd, D.C. ; Zhang, B. ; Rodier, F. ; Flaitz, P.L. ; McMurray, J.S. ; Chan, K.K. ; Kim, B. ; Breitwisch, M.J. ; Walko, J.P. ; Pendleton, D. ; Holloway, K.L. ; Ritter, M.B. ; Kash, J.A. ; Leong, M.
Author_Institution :
Div. of Res., IBM Semicond. Res. & Dev. Center., Yorktown Heights, NY, USA
Abstract :
In this paper,we demonstrate the integration of optimized LTDs with 0.13/spl mu/m CMOS technology. Excellent characteristics were achieved for both the photodiodes and the CMOS transistors. 10Gb/s operation was demonstrated at a supply voltage of only 1.5V.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; photodetectors; photodiodes; silicon; 0.13 micron; 1.5 V; CMOS technology; CMOS transistors; Si; photodiodes; silicon lateral trench photodetector; CMOS process; CMOS technology; Capacitance; Delay; Fingers; Microelectronics; Photodetectors; Photodiodes; Silicon; Voltage;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221076
