Title :
Investigation of the current-voltage characteristics of N+/P junction silicon solar cell emitters formed by phosphorus diffusion paste on P-Si substrate
Author :
Kim, JinSung ; Moon, Kyungwon ; Shin, Kyu-Sang ; Jung, Myeong-Il ; Choi, Chel-Jong
Author_Institution :
Dept. of BIN Fusion Technol., Chonbuk Nat. Univ., Jeonju, South Korea
Abstract :
We have investigated the current-voltage characteristics of n+/p junction solar cells formed on p-Si substrate with n+ emitter junction formed by diffusion phosphorus paste by means of furnace annealing. The annealing has been carried out in different ambients. The diode annealed in O2 ambient showed the best rectifying behavior while the diode annealed in Ar showed the least with degradation of rectifying behavior with increase of flow rate.
Keywords :
annealing; elemental semiconductors; semiconductor diodes; silicon; solar cells; P-Si; Si; current-voltage characteristic investigation; diode annealing; flow rate increase; furnace annealing; n+ emitter junction; n+-p junction solar cell emitter; phosphorus diffusion paste; rectifying behavior; Annealing; Argon; Junctions; Photovoltaic cells; Semiconductor diodes; Silicon; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186384
