A new Si:C epitaxial channel nMOSFET architecture with improved drivability and short-channel characteristics

Author

Ernst, Thomas ; Ducroquet, F. ; Hartmann, J.-M. ; Weber, O. ; Loup, V. ; Truche, R. ; Papon, A.M. ; Holliger, P. ; Previtali, B. ; Toffoli, A. ; Di Maria, J.L. ; Deleonibus, S.

Author_Institution

LETI, CEA-DRT, Grenoble, France

fYear

2003

fDate

10-12 June 2003

Firstpage

51

Lastpage

52

Abstract

We present for the first time epitaxially grown Si:C nMOSFET channels acting as boron blocking barriers containing up to 1.4% substitutional carbon. The high impact of interstitial carbon and epitaxial growth conditions on electron inversion layer mobility is evidenced for the first time. We achieved super-retrograde channel and pockets profiles for improved short channel effects control. This allows improved I/sub ON/(850 /spl mu/A//spl mu/m)/I/sub OFF/(200 nA//spl mu/m) ratio as compared to non-carbonated short channel devices without any degradation of transport properties or gate oxide integrity.

Keywords

MOSFET; carbon; electron mobility; elemental semiconductors; inversion layers; semiconductor epitaxial layers; silicon; Si:C; Si:C epitaxial channel nMOSFET architecture; boron blocking barriers; carbon substitution; channel effects control; degradation; electron inversion layer; electron mobility; epitaxial growth; gate oxide integrity; interstitial carbon impact; noncarbonated short channel devices; pockets profiles; super retrograde channel; transport properties; Boron; CMOS process; Degradation; Electron mobility; Epitaxial growth; Implants; MOSFET circuits; Scattering; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221081

Filename

1221081