Title :
Improvement of threshold voltage roll-off by ultra-shallow junction formed by flash lamp annealing
Author :
Ito, T. ; Suguro, K. ; Itani, T. ; Nishinohara, K. ; Matsuo, K. ; Saito, T.
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
Abstract :
Flash lamp annealing (FLA) was first applied to complementary MOSFETs (CMOS) as a new method of activating implanted impurities in source and drain. By optimizing ion implantation and activation annealing conditions, junction depth less than 10 nm with good junction leakage were successfully obtained for both p/sup +//n and n/sup +//p junctions. Threshold voltage (V/sub th/) roll-off characteristics for MOSFETs fabricated by FLA show drastic improvement as compared with conventional spike annealing.
Keywords :
MOSFET; incoherent light annealing; ion implantation; leakage currents; CMOS; MOSFET; drain; flash lamp annealing; implanted impurities; ion implantation; source; threshold voltage roll off; ultra shallow junction; Annealing; CMOS technology; Heating; Indium tin oxide; Lamps; MOSFETs; Semiconductor device manufacture; Surface resistance; Temperature; Threshold voltage;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221082
