TiN/HfO/sub 2//TiN capacitor technology applicable to 70 nm generation DRAMs

Author

Se-Hoon Oh ; Jeong-Hee Chung ; Jae-Hyoung Choi ; Cha-Young Yoo ; Young Sun Kim ; Sung Tae Kim ; U-In Chung ; Joo Tae Moon

Author_Institution

Semicond. R&D Div., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea

fYear

2003

fDate

10-12 June 2003

Firstpage

73

Lastpage

74

Abstract

We have developed a cylindrical TiN/HfO/sub 2//TiN (TIT) capacitor for 70 nm DRAMs application. TIT capacitors with HfO/sub 2/ films deposited by ALD(Atomic Layer Deposition) using Hf(NEtMe)/sub 4/ precursor and O/sub 2/ plasma as a reactant is shown to be applicable to DRAM device below 70 nm design rule for the first time. It shows the thermal budget endurance against back-end process of DRAM device as well as the very low enough Toxeq of about 13 /spl Aring/ to provide the sufficient cell capacitance.

Keywords

DRAM chips; MIM devices; atomic layer deposition; dielectric materials; dielectric thin films; hafnium compounds; leakage currents; thin film capacitors; titanium compounds; 70 nm; DRAM device; O/sub 2/ plasma; TiN-HfO/sub 2/-TiN; TiN-HfO/sub 2/-TiN capacitor; atomic layer deposition; cell capacitance; thermal budget endurance; Capacitance; Dielectric thin films; Hafnium oxide; High-K gate dielectrics; Leakage current; MIM capacitors; Plasma temperature; Random access memory; Thermal degradation; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221092

Filename

1221092