Thermally robust Ta-doped Ni SALICIDE process promising for sub-50 nm CMOSFETs

Author

Sun, M.C. ; Kim, M.J. ; Ku, J.-H. ; Roh, K.J. ; Kim, C.S. ; Youn, S.P. ; Jung, Seung-Won ; Choi, S. ; Lee, N.I. ; Kang, H.-K. ; Suh, K.P.

Author_Institution

Syst. LSI Div., Samsung Electron. Co Ltd, Yongin, South Korea

fYear

2003

fDate

10-12 June 2003

Firstpage

81

Lastpage

82

Abstract

For sub-50 nm device application, Self-Aligned siLICIDE (SALICIDE) process by NiTa alloy has been developed for the first time. Use of NiTa-alloy makes nickel silicide on 50 nm gate thermally-robust up to 600/spl deg/C during device fabrication. NiTa SALICIDE process can also achieve excellent value and distribution of sheet resistance on 30 nm gate as well as low junction leakage current compared to Co SALICIDE. Furthermore, the drive current of PMOS is greatly increased. As a result, high-performance 90 nm MOSFETs is successfully integrated with NiTa SALICIDE process.

Keywords

MOSFET; elemental semiconductors; leakage currents; nickel alloys; silicon; tantalum alloys; 30 nm; 50 nm; 600 degC; 90 nm; CMOSFETs; NiSi:Ta-Si; NiTa alloy; PMOS drive current; Ta doped Ni salicide process; junction leakage current; nickel silicide compounds; sheet resistance; thermally robust; CMOSFETs; MOSFETs; Nickel; Robustness; Semiconductor films; Silicides; Silicon; Sun; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221096

Filename

1221096