Title :
Universality of NBTI - From devices to circuits and products
Author :
Mahapatra, Santanu ; Huard, Vincent ; Kerber, Andreas ; Reddy, Veerababu ; Kalpat, S. ; Haggag, A.
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai, India
Abstract :
This paper showcases the universality of NBTI and its dependencies on time, bias, temperature, AC frequency and pulse duty cycle across different process integration schemes used in the industry and technology nodes. Strong correlation has been established between device, circuit, and product degradation. Different aspects of variability and variable NBTI in small area devices have been discussed. Features that are important from an industrial perspective are highlighted. Any NBTI model should address these aspects to be considered relevant.
Keywords :
negative bias temperature instability; AC frequency; NBTI model; NBTI universality; NBTI variability; process integration scheme; product degradation; pulse duty cycle; Correlation; Degradation; Logic gates; Stress; Stress measurement; Time measurement; Time-frequency analysis; Fmax degradation; NBTI; RO degradation; SRAM Vmin shift; trap generation; variable BTI;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860615