90 nm CMOS RF technology with 9.0 V I/O capability for single-chip radio

Author

Baldwin, G. ; Ai, J. ; Benaissa, K. ; Chen, F. ; Chidambaram, P.R. ; Ekbote, S. ; Ghneim, S. ; Liu, S. ; Machala, C. ; Mehrad, F. ; Mosher, D. ; Pollack, G. ; Tran, T. ; Williams, B. ; Yang, J. ; Yang, S. ; Johnson, F.S.

Author_Institution

Texas Instrum., Dallas, TX, USA

fYear

2003

fDate

10-12 June 2003

Firstpage

87

Lastpage

88

Abstract

In this article, an industry leading 21 mask count 90nm CMOS SoC technology with integrated RF, analog, dense memory, low power or high-speed logic, and high-voltage DEMOS options is demonstrated. RF and analog characteristics with high on-chip voltage capability enable single chip radio design as well as many additional SoC applications.

Keywords

MOSFET; cellular radio; high-speed integrated circuits; masks; power integrated circuits; radiofrequency integrated circuits; system-on-chip; 9.0 V; 90 nm; CMOS SoC technology; analog circuits; dense memory; high on-chip voltage capability; high voltage MOS; high-voltage drain extended MOS; integrated RF circuits; single chip radio design; CMOS technology; Circuit testing; Costs; Delay; Design optimization; Implants; Inductors; Radio frequency; Varactors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221099

Filename

1221099