• DocumentCode
    1867142
  • Title

    Design of the shape, size, and distribution of the array of crystalline ZnO nanowires

  • Author

    Spitsina, S. ; Kahrizi, M.

  • Author_Institution
    Electr. & Comput. Eng., Concordia Univ., Montréal, QC, Canada
  • fYear
    2012
  • fDate
    April 29 2012-May 2 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    As an ongoing research in our laboratories we are investigating the development of a gas ionization sensor (GIS). GIS is one of the most efficient gas sensors in terms of selectivity, reversibility, fast response time, low noise, and durability. This gas detector is based on breakdown of the gases inside two-parallel plates biased with high electric potential. The incorporation of the nanowires (NWs) in GIS results in a decreased applied voltage on the device. As the structure, size, and distribution of NWs affect the amplification properties of electric field inside a gas detector, in this work a technique to optimize NWs geometrical shape and their distribution for achieving the highest electric field inside the gas sensor is studied. ZnO NWs were chosen for this purpose as ZnO NWs possess specific characteristics such as reversibility, sensitivity, long life, repeatability, and possibility to grow them with different geometrical shapes. The design of ZnO NWs grown using a low cost and high throughput electrochemical fabrication process is investigated. The induced electric field influenced by structural parameters of NWs apexes was assessed using finite element method (COMSOL).
  • Keywords
    II-VI semiconductors; electrodeposition; finite element analysis; gas sensors; nanofabrication; nanowires; pH; semiconductor growth; wide band gap semiconductors; zinc compounds; ZnO; amplification properties; crystalline zinc oxide nanowires; durability; electrochemical fabrication; fast response time; finite element method; gas breakdown; gas detector; gas ionization sensor; high electric potential; low noise; nanowire shape array; nanowire size array; pH; reversibility; selectivity; structural properties; Arrays; Electric fields; Geometry; Gold; Shape; Silicon; Zinc oxide; ZnO nanowires; electrochemical process; local electric field;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical & Computer Engineering (CCECE), 2012 25th IEEE Canadian Conference on
  • Conference_Location
    Montreal, QC
  • ISSN
    0840-7789
  • Print_ISBN
    978-1-4673-1431-2
  • Electronic_ISBN
    0840-7789
  • Type

    conf

  • DOI
    10.1109/CCECE.2012.6334890
  • Filename
    6334890