DocumentCode
1867181
Title
A novel self-aligned shallow trench isolation cell for 90 nm 4 Gbit NAND flash EEPROMs
Author
Ichige, M. ; Takeuchi, Y. ; Sugimae, K. ; Sato, Akira ; Matsui, M. ; Kamigaichi, T. ; Kutsukake, H. ; Ishibashi, Y. ; Saito, M. ; Mori, S. ; Meguro, H. ; Miyazaki, S. ; Miwa, T. ; Takahashi, S. ; Iguchi, T. ; Kawai, N. ; Tamon, S. ; Arai, N. ; Kamata, H.
Author_Institution
Semicond. Co., Toshiba Corp., Yokohama, Japan
fYear
2003
fDate
10-12 June 2003
Firstpage
89
Lastpage
90
Abstract
Recently, the new memory structures, those FG and AA are completely self aligned, are qualified for 4Gb NAND flash memory in 90 nm technology node. This paper describes that the new structures and these electrical characteristics and also peripheral transistors´ performances.
Keywords
NAND circuits; flash memories; isolation technology; nanotechnology; transistors; 4 Gbyte; 90 nm; NAND flash EEPROMs; electrical properties; flash memory; peripheral transistors; self-aligned shallow trench isolation cell; EPROM; Isolation technology; Paper technology;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
4-89114-033-X
Type
conf
DOI
10.1109/VLSIT.2003.1221100
Filename
1221100
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