Title :
A novel self-aligned shallow trench isolation cell for 90 nm 4 Gbit NAND flash EEPROMs
Author :
Ichige, M. ; Takeuchi, Y. ; Sugimae, K. ; Sato, Akira ; Matsui, M. ; Kamigaichi, T. ; Kutsukake, H. ; Ishibashi, Y. ; Saito, M. ; Mori, S. ; Meguro, H. ; Miyazaki, S. ; Miwa, T. ; Takahashi, S. ; Iguchi, T. ; Kawai, N. ; Tamon, S. ; Arai, N. ; Kamata, H.
Author_Institution :
Semicond. Co., Toshiba Corp., Yokohama, Japan
Abstract :
Recently, the new memory structures, those FG and AA are completely self aligned, are qualified for 4Gb NAND flash memory in 90 nm technology node. This paper describes that the new structures and these electrical characteristics and also peripheral transistors´ performances.
Keywords :
NAND circuits; flash memories; isolation technology; nanotechnology; transistors; 4 Gbyte; 90 nm; NAND flash EEPROMs; electrical properties; flash memory; peripheral transistors; self-aligned shallow trench isolation cell; EPROM; Isolation technology; Paper technology;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221100
