Feasibility study of TOF-SIMS surface measurement for Aluminum bond pad fluorine contamination

Author

Han Wei Teo ; Yanjing Yang ; Yun Wang ; Lei Zhu ; Zhi Qiang Mo ; Si Ping Zhao ; Lam, Jeffrey

Author_Institution

Testing & Failure Anal. Dept., GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, Singapore

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

61

Lastpage

63

Abstract

This paper elucidates the importance of ion-yield enhancement through primary-ion bombardment in ultra-high surface sensitive Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) measurements of Aluminum bond pad fluorine contamination. A good correlation is achieved, R² of 0.97, with Auger Electron Spectroscopy (AES) that is commonly used for bond pad surface contamination quantification.

Keywords

integrated circuit measurement; integrated circuit yield; surface contamination; time of flight mass spectroscopy; Auger Electron Spectroscopy; TOF-SIMS surface measurement; aluminum bond pad fluorine contamination; ion yield enhancement; primary ion bombardment; time-of-flight secondary ion mass spectrometry; ultrahigh surface sensitive mass spectrometry; Correlation; Mass spectroscopy; Pollution measurement; Surface contamination; Surface morphology; AES; Aluminum Bond Pad; Fluorine Contamination; Ion-yield enhancement; TOF-SIMS;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224333

Filename

7224333