Title :
Aluminum charge/dipole passivation induced by hydrogen diffusion in high-k metal gate
Author :
Ribes, G. ; Barral, V. ; Chhun, S. ; Gros-Jean, M. ; Caubet, P. ; Petit, D.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
In this study, we have analyzed the influence of different high-k (HK), interfacial layer (IL) and metal gate on the Al effect. We show that hydrogen diffusion during the BEOL process can suppress totally the Al effect on work function. Solutions to stabilize the Al effect with respect to hydrogen diffusion are proposed and a model explaining the hydrogen and Al interaction is provided.
Keywords :
aluminium; diffusion; high-k dielectric thin films; hydrogen; passivation; work function; Al; BEOL process; aluminum charge-dipole passivation; high-k metal gate; hydrogen diffusion; interfacial layer; work function; Annealing; High K dielectric materials; Hydrogen; Logic gates; Passivation; Tin; Aluminium; High-K; hydrogen; metal gate;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860622
