Title :
New buried bit-line NAND (BiNAND) Flash memory for data storage
Author :
Sean Chang ; Evans Yang ; Terry Chen ; Lizzy Huang ; Bennett Hsu ; Da Sung ; Jiang-Chi Duh ; Chi-Wei Hung ; Vincent Huang ; Ya-Ching King ; Chih-Hsiun Chu ; Charles Ching-Hsiang Hsu
Author_Institution :
eMemory Technol. Inc., Hsin-Chu, Taiwan
Abstract :
Buried bit-line NAND (BiNAND) Flash is newly proposed to achieve low voltage programming/erase and facilitate multi-level storage. Due to the buried bit-line, the required high program/erase voltage for FN tunneling can be divided between word-line and bit-line and therefore minimizes the disturbance. The negative programmed threshold voltage also facilitates the operation of multi-level storage due to high array conductivity.
Keywords :
flash memories; logic gates; Fowler-Nordheim tunneling; array conductivity; buried bit-line NAND; data storage; flash memory; low voltage erasing; low voltage programming; multilevel storage; threshold voltage; word-line; Conductivity; Electrons; Flash memory; Isolation technology; Low voltage; Plugs; Stability; Threshold voltage; Tunneling; Upper bound;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221103
