Title :
Effects of interface properties in SiC MOSFETs on reliability
Author :
Mori, Y. ; Hisamoto, D. ; Tega, N. ; Matsumura, M. ; Yoshimoto, H. ; Shima, A. ; Shimamoto, Y.
Author_Institution :
Center for Technol. Innovation - Electron., Hitachi, Ltd., Kokubunji, Japan
fDate :
June 29 2015-July 2 2015
Abstract :
Based on the experience with silicon (Si) devices, some characteristics of silicon carbide (SiC) devices are likely to be misunderstood. In this paper, studies on channel mobility, time dependent dielectric breakdown (TDDB), and negative bias temperature instability (NBTI) in 4H-SiC MOSFETs are reviewed. Through the discussions, it is indicated that SiC-based models, such as local band gap modulation, and models for the relationship between defect energy state and SiC band gap are effective to understand the above characteristics.
Keywords :
MOSFET; defect states; energy gap; negative bias temperature instability; semiconductor device models; silicon compounds; wide band gap semiconductors; 4H-SiC MOSFET; NBTI; SiC; SiC band gap; SiC devices; SiC-based models; TDDB; channel mobility; defect energy state; local band gap modulation; negative bias temperature instability; reliability; silicon carbide devices; silicon devices; time dependent dielectric breakdown; Dielectric breakdown; Face; Interface states; Photonic band gap; Silicon; Silicon carbide;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224335
