Title :
A unified model to understand degradation of a-InGaZnO TFTs under various gate bias stresses with or without light illumination
Author :
Mingxiang Wang ; Jie Xu ; Huaisheng Wang ; Qi Shan
Author_Institution :
Dept. of Microelectron., Soochow Univ., Suzhou, China
fDate :
June 29 2015-July 2 2015
Abstract :
A unified model is proposed to consistently explain the degradation behaviors of a-IGZO TFTs under different light illumination and gate bias stress conditions. In the proposed model, photo-excited double ionized oxygen vacancies (Vo2+) traps and their transportation under the electric field are two key factors that cause the threshold voltage (Vth) shift of TFTs. Additional traps generated during the formation of Vo2+ also deteriorate the subthreshold characteristics.
Keywords :
amorphous semiconductors; gallium compounds; indium compounds; photoexcitation; semiconductor device models; thin film transistors; vacancies (crystal); zinc compounds; InGaZnO; a-IGZO TFT; degradation behaviors; electric field; gate bias stress conditions; light illumination conditions; photo-excited double ionized oxygen vacancies traps; threshold voltage shift; Charge carrier processes; Degradation; Lighting; Logic gates; Stress; Thin film transistors; Transportation; InGaZnO; charge trapping; gate bias stress; light illumination; oxygen vacancy; thin film transistors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224337
