DocumentCode :
1867295
Title :
Comparison of solar cell device thermal degradation and low-irradiance performance
Author :
Feist, Rebekah ; Mills, Michael ; Thompson, Kirk ; Ramesh, Narayan
Author_Institution :
Dow Solar Solutions, Dow Chem. Co., Midland, MI, USA
fYear :
2011
fDate :
19-24 June 2011
Abstract :
The thermal degradation, low-irradiance performance, IV and EQE characteristics of CuInGaSe2 (CIGS), c-Si, and GaAs photovoltaic devices are presented. Typically thin-film polycrystalline materials are hypothesized to be advantaged over monocrystalline materials due to their lower thermal degradation coefficient and improved low-irradiance performance. In this work the performance of these different solar cell materials was evaluated with the intent being to determine if these hypothesized performance distinctions exist. Such differences could indicate that solar cells exhibit optimum performance in specific climates.
Keywords :
III-V semiconductors; copper compounds; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; silicon; solar cells; ternary semiconductors; thin films; CuInGaSe2; EQE characteristic; GaAs; IV characteristics; Si; hypothesized performance distinction; low-irradiance performance; lower thermal degradation coefficient; monocrystalline material; photovoltaic solar cell device thermal degradation; solar cell material; thin-film polycrystalline material; Degradation; Gallium arsenide; Performance evaluation; Photovoltaic cells; Temperature measurement; Thermal degradation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186414
Filename :
6186414
Link To Document :
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