DocumentCode
1867310
Title
Strained silicon NMOS with nickel-silicide metal gate
Author
Qi Xiang ; Jung-Suk Goo ; Pan, J. ; Bin Yu ; Ahmed, S. ; John Zhang ; Ming-Ren Lin
Author_Institution
Technol. Dev. Group, Adv. Micro Devices Inc., Sunnyvale, CA, USA
fYear
2003
fDate
10-12 June 2003
Firstpage
101
Lastpage
102
Abstract
Strained Si NMOS transistors with Lgate down to 35 nm were fabricated using NiSi as a metal gate electrode material for the first time. Compared to poly gate devices, NiSi metal gate devices showed further enhanced performance with good control of short channel effects and no degradation in gate oxide integrity.
Keywords
MOSFET; elemental semiconductors; nickel compounds; silicon; 35 nm; NiSi; Si; channel effects; nickel-silicide metal gate electrode; poly gate devices; strained silicon NMOS transistors; Degradation; Doping; Electrodes; Electron mobility; Germanium silicon alloys; MOS devices; Silicides; Silicon germanium; Strain control; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
4-89114-033-X
Type
conf
DOI
10.1109/VLSIT.2003.1221106
Filename
1221106
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