Stability of High performance p-type SnO TFTs

Author

Zhong, C.W. ; Tsai, H.Y. ; Lin, H.C. ; Liu, K.C. ; Huang, T.Y.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2015

fDate

June 29 2015-July 2 2015

Firstpage

84

Lastpage

87

Abstract

High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline SnO, resulting in decent field-effect mobility and high on/off current ratio. Electrical stability was evaluated by examining the threshold voltage shift under negative bias stresses at different stress times. A scenario considering the passivation/de-passivation of acceptor defects in the channel and the hole trapping of the gate oxide is proposed to explain the observed instability of the SnO TFTs.

Keywords

annealing; carrier mobility; hole traps; passivation; semiconductor device reliability; thin film transistors; tin compounds; SnO; acceptor passivation; field-effect mobility; hole trapping; negative bias stress; p-type SnO TFT; polycrystalline SnO; thermal oxygen annealing process; threshold voltage shift; tin-rich oxide film; Annealing; Charge carrier processes; Films; Logic gates; Stress; Thermal stability; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/IPFA.2015.7224339

Filename

7224339