Title :
Mode locked distributed Bragg reflector laser
Author :
Fan, Haining ; Dutta, N.K. ; Koren, U. ; Chen, C.H. ; Piccirilli, A.B.
Author_Institution :
Dept. of Phys., Connecticut Univ., Storrs, CT, USA
Abstract :
Summary form only given. Mode locked semiconductor lasers are important for a wide range of fiber transmission systems. These include soliton generation and clock recovery in very high speed transmission systems. Compact, single chip, mode locked lasers are desirable for practical systems since they are likely to be more stable than the offchip external cavity designs. The fabrication and performance characteristics of a single chip mode locked laser is reported here. The laser emits near 1.55 /spl mu/m and is fabricated using the InGaAsP/InP material system.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser mode locking; optical solitons; semiconductor lasers; 1.55 mum; InGaAsP-InP; clock recovery; fiber transmission systems; mode locked distributed Bragg reflector laser; semiconductor lasers; single chip mode locked lasers; soliton generation; Clocks; Distributed Bragg reflectors; Fiber lasers; Indium phosphide; Laser mode locking; Laser stability; Optical design; Optical device fabrication; Semiconductor lasers; Solitons;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834129
