Title :
Mass transport-induced failure in direct copper (Cu) bonding interconnects for 3-D integration
Author :
Moreau, Sandrine ; Beilliard, Y. ; Coudrain, P. ; Bouchu, D. ; Taibi, Rachid ; Di Cioccio, L.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
This paper presents the first complete electromigration study (EM tests, failure analyses, statistical analyses with lifetime extrapolation) for direct copper bonding interconnects. This study reveals excellent performances, comparable to BEoL interconnects. Nevertheless, the results show that it will be interesting to increase the precision of alignment to maximize the Cu-Cu interface in comparison of the Cu-SiO2 to ensure high activation energy and at the end a high electromigration resistance.
Keywords :
copper; electromigration; extrapolation; failure analysis; integrated circuit interconnections; integrated circuit reliability; silicon compounds; statistical analysis; three-dimensional integrated circuits; 3D integration; BEoL interconnects; Cu-Cu; Cu-SiO2; EM tests; activation energy; direct copper bonding interconnects; electromigration resistance; failure analyses; lifetime extrapolation; mass transport-induced failure; statistical analyses; Bonding; Copper; Electromigration; Failure analysis; Imaging; Integrated circuit interconnections; Resistance; Black´s law; Direct copper bonding; copper; electromigration; failure analyses;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860631
