DocumentCode :
1867442
Title :
Comparative study of different technology of mechanical decap to check excess solder issue — Conventional versus new approaches
Author :
Ramuhzan, Fadhilah Nurani ; Hasan, Zainal Abas ; Yusof, Yusnani Mohamad
Author_Institution :
ON Semicond. Sdn Bhd., Seremban, Malaysia
fYear :
2015
fDate :
June 29 2015-July 2 2015
Firstpage :
96
Lastpage :
101
Abstract :
Mechanical decapsulation is a method of removing mold compound material from a packaged electronic device of the type encapsulated with a protective material that forms an outer surface of the device [1]. Though wet decapsulation is certainly the most common method, it is not appropriate for all types of semiconductor failure analysis. Contaminants on the surface and side of the semiconductor die can be washed away by the acids and solvents; if the contaminants had no secondary effect (for example, corrosion of the traces on the IC and solder remelt traces on the side wall of the die). Thus, there will be no remaining clue as to the root cause of failure on the device. Different decapsulation approach is necessary which is for this case, mechanical decapsulation much more appropriate approach to be used [2]. This paper aims to describe and compare conventional mechanical decapsulation and new approaches of mechanical decapsulation to check solder remelt mechanism on the die side wall.
Keywords :
failure analysis; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; soldering; surface contamination; die side wall; mechanical decap technology; mechanical decapsulation; mold compound material removing; packaged electronic device; semiconductor die; semiconductor failure analysis; solder issue; solder remelt mechanism; wet decapsulation; Chemicals; Compounds; Lead; Plastics; Surface contamination; Surface cracks; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/IPFA.2015.7224342
Filename :
7224342
Link To Document :
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