Title :
Re-examination of subband structure engineering in ultra-short channel MOSFETs under ballistic carrier transport
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
In this paper, we proposes a new design methodology of MOS channel engineering based on the optimization of subband structures under full-ballistic transport regime and presents the theoretical predictions.
Keywords :
MOSFET; ballistic transport; semiconductor device models; MOS channel engineering; ballistic carrier transport; channel MOSFET; subband structures; Ballistic transport; Design methodology; Effective mass; Electrons; Guidelines; Laboratories; Large scale integration; MOSFETs; Power supplies; Scattering;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221112
