DocumentCode
1867465
Title
Re-examination of subband structure engineering in ultra-short channel MOSFETs under ballistic carrier transport
Author
Takagi, S.
Author_Institution
Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan
fYear
2003
fDate
10-12 June 2003
Firstpage
115
Lastpage
116
Abstract
In this paper, we proposes a new design methodology of MOS channel engineering based on the optimization of subband structures under full-ballistic transport regime and presents the theoretical predictions.
Keywords
MOSFET; ballistic transport; semiconductor device models; MOS channel engineering; ballistic carrier transport; channel MOSFET; subband structures; Ballistic transport; Design methodology; Effective mass; Electrons; Guidelines; Laboratories; Large scale integration; MOSFETs; Power supplies; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
4-89114-033-X
Type
conf
DOI
10.1109/VLSIT.2003.1221112
Filename
1221112
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