• DocumentCode
    1867486
  • Title

    On the origin of frequency dependence of single-trap induced degradation in AC NBTI

  • Author

    Dongyuan Mao ; Shaofeng Guo ; Runsheng Wang ; Changze Liu ; Ru Huang

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    107
  • Lastpage
    110
  • Abstract
    The frequency dependence of the single-trap induced degradation (STID) are investigated both experimentally and theoretically, which is the key for the understanding of AC NBTI characteristics and temporal variations. Instead of the conventional 2-state trap model (2SM), the 4-state trap model (4SM) are studied through Monte-Carlo simulation in detail, which give a reasonable interpretation of the abnormal experimental results. A simple physical model is also proposed for the frequency dependence prediction, which agrees well with the simulation and experiments. This work is helpful for the evaluation of the impact of AC NBTI under different frequencies.
  • Keywords
    CMOS integrated circuits; electron traps; hole traps; integrated circuit reliability; negative bias temperature instability; Monte Carlo simulation; NBTI; STID; four state trap model; frequency dependent degradation; single trap induced degradation; Degradation; Frequency dependence; Monte Carlo methods; Nanoscale devices; Sampling methods; Stress; Time-frequency analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224344
  • Filename
    7224344