DocumentCode
1867486
Title
On the origin of frequency dependence of single-trap induced degradation in AC NBTI
Author
Dongyuan Mao ; Shaofeng Guo ; Runsheng Wang ; Changze Liu ; Ru Huang
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
107
Lastpage
110
Abstract
The frequency dependence of the single-trap induced degradation (STID) are investigated both experimentally and theoretically, which is the key for the understanding of AC NBTI characteristics and temporal variations. Instead of the conventional 2-state trap model (2SM), the 4-state trap model (4SM) are studied through Monte-Carlo simulation in detail, which give a reasonable interpretation of the abnormal experimental results. A simple physical model is also proposed for the frequency dependence prediction, which agrees well with the simulation and experiments. This work is helpful for the evaluation of the impact of AC NBTI under different frequencies.
Keywords
CMOS integrated circuits; electron traps; hole traps; integrated circuit reliability; negative bias temperature instability; Monte Carlo simulation; NBTI; STID; four state trap model; frequency dependent degradation; single trap induced degradation; Degradation; Frequency dependence; Monte Carlo methods; Nanoscale devices; Sampling methods; Stress; Time-frequency analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224344
Filename
7224344
Link To Document