Effect of non-uniformity of the electric potential within crystalline Si bare cells and correction of I-V curves for measurement error

Author

Tobita, H. ; Ishitsuka, M. ; Hishikawa, Y.

Author_Institution

Res. Center for Photovoltaic Technol. Central 2, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2011

fDate

19-24 June 2011

Abstract

The effects of non-uniformity of the electric potential on the front and rear surfaces of crystalline silicon (c-Si) bare cells on the current-voltage (I-V) characteristics are investigated. During I-V measurement, c-Si bare cells have a surface distribution of electric potential that can significantly influence the fill factor and maximum power. The potential distribution is sensitively dependent on the configuration of the current and the voltage probes of the sample stage used for measurement. We demonstrate an experimental procedure to correct the measured I-V curves with respect to the potential distribution.

Keywords

electric potential; elemental semiconductors; measurement errors; probes; silicon; solar cells; Si; crystalline bare cell; current probe; current-voltage curve correction characteristic; electric potential distribution; fill factor; l-V curve correction characteristic; l-V measurement; measurement error; nonuniformity effect; surface distribution; voltage probe; Current measurement; Electric potential; Electrodes; IEEE Potentials; Probes; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186421

Filename

6186421