Novel CMP slurries for planarization of multilevel copper interconnect

Author

Song, J.Y. ; Chen, Y.H. ; Lee, S.N. ; Chiou, W.C. ; Tseng, T.C. ; Kuo, H.H. ; Chuang, C.J. ; Lin, K.C. ; Jang, S.M. ; Liang, M.S.

Author_Institution

Adv. Module Technol. Div., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2003

fDate

10-12 June 2003

Firstpage

123

Lastpage

124

Abstract

Novel slurries were developed for Cu, TaN, and dielectric chemical mechanical polish (CMP) to greatly enhance the planarity of Cu dual damascene interconnect (DDI). Compared with conventional alumina-based slurries, the newly designed polymer-based slurries achieve best sheet resistance (Rs) control over a wide range of Cu density on various stack layers with excellent overpolish window. Through optimizing chemical components, these novel slurries also demonstrated smooth Cu morphology and least galvanic corrosion during polish and robust reliability of eight level Cu interconnect, including electromigration (EM) and stress migration (SM), has been achieved.

Keywords

chemical mechanical polishing; copper; corrosion; electromigration; integrated circuit interconnections; integrated circuit reliability; internal stresses; planarisation; surface morphology; tantalum compounds; Cu; Cu density; Cu dual damascene interconnection; Cu morphology; TaN; TaN compounds; chemical components; chemical mechanical polishing slurries; electromigration; least galvanic corrosion; multilevel copper interconnection; planarization; robust reliability; sheet resistance; stress migration; Chemicals; Copper; Corrosion; Dielectrics; Galvanizing; Morphology; Planarization; Polymers; Robustness; Slurries;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221116

Filename

1221116