Title :
Thermally robust 90 nm node Cu-Al wiring technology using solid phase reaction between Cu and Al
Author :
Matsubara, Y. ; Komuro, M. ; Onodera, T. ; Ikarashi, N. ; Hayashi, Y. ; Sekine, M.
Author_Institution :
Adv. Technol. Dev. Div., NEC Electron. Corp., Kanagawa, Japan
Abstract :
This paper describes a thermally robust and low cost Cu-Al wiring technology using solid phase reaction between ECD Cu and PVD Al. No significant sheet resistance and uniformity change has been obtained with precise Al concentration control. This technology dramatically improves reliable performance for stress induced voiding (SIV) as well as electro-migration (EM) and the most promising candidate for SIV free 90 nm Cu-Al process with lower cost.
Keywords :
aluminium alloys; copper alloys; electrodeposits; electromigration; metallic thin films; reliability; stress effects; vapour deposited coatings; voids (solid); wiring; 90 nm; Al concentration control; CuAl; PVD; electrochemical deposition; electromigration; low cost CuAl wiring technology; reliability; solid phase reaction; stress; thermally robust technology; voids; Artificial intelligence; Copper alloys; Costs; Robustness; Solids; Stress; Temperature; Testing; Tin; Wiring;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221118
