DocumentCode :
186764
Title :
Analyzing correlation between multiple traps in RTN characteristics
Author :
Obara, T. ; Teramoto, A. ; Yonezawa, A. ; Kuroda, Rihito ; Sugawa, Shigetoshi ; Ohmi, Tadahiro
Author_Institution :
Tohoku Univ., Sendai, Japan
fYear :
2014
fDate :
1-5 June 2014
Abstract :
The correlation between multiple traps in Random Telegraph Noise (RTN) were evaluated by using Time-Lag-Plot (TLP). The correlations between multiple traps were evaluated by transition paths on the TLP and there are two types of RTN. In the 1st case, multiple traps are independent from each other and in the second case the multiple traps have the correlation. We proposed the models for three states RTN to understanding the mechanism of them. These methods help us to understand the RTN mechanism and the correlation between multiple traps.
Keywords :
MOSFET; random noise; semiconductor device noise; RTN characteristics; TLP; correlation analysis; multiple traps; random telegraph noise; time-lag-plot; transition paths; Correlation; Electron traps; Histograms; Logic gates; MOSFET; Noise; Time-Lag-Plot; multiple traps; random telegraph noise; transition path;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
Type :
conf
DOI :
10.1109/IRPS.2014.6860644
Filename :
6860644
Link To Document :
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