Title :
High performance 25 nm FDSOI devices with extremely thin silicon channel
Author :
Krivokapic, Z. ; Maszara, W. ; Arasnia, F. ; Paton, E. ; Kim, Y. ; Washington, L. ; Zhao, E. ; Chan, J. ; Zhang, J. ; Marathe, A. ; Lin, M.R.
Author_Institution :
Technol. Res. Group, AMD, Sunnyvale, CA, USA
Abstract :
We demonstrate 25 nm mid-gap metal gate fully-depleted silicon on insulator (FDSOI) devices with the highest reported drive current for a single-gate PMOS device (I/sub on/=789 /spl mu/A//spl mu/m and I/sub off/=27 nA//spl mu/m for V/sub gs/-V/sub t/=1.25 V). We observe electron and hole mobility degradation for very thin channels (/spl sim/7 nm). Devices show good hot carrier and gate dielectric reliability.
Keywords :
MOSFET; electron mobility; elemental semiconductors; hole mobility; hot carriers; semiconductor device reliability; semiconductor thin films; silicon; silicon-on-insulator; 25 nm; Si; drive current; electron mobility; gate dielectric reliability; hole mobility degradation; hot carrier; mid-gap metal gate fully depleted silicon on insulator; single-gate PMOS device; thin silicon channel; Charge carrier processes; Degradation; Dielectrics; Electron mobility; Hot carriers; MOS devices; Silicon; Stress; Thickness control; Threshold voltage;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221120
