Title :
800 MHz-band low noise low distortion Si-MMIC front-end using BJT/MOSFET LNA and MOSFET mixer
Author :
Suematsu, N. ; Ono, M. ; Sugiyama, S. ; Kubo, S. ; Uesugi, M. ; Hasegawa, K. ; Hiroshige, K. ; Iyama, Y. ; Ishida, O.
Author_Institution :
Inf. Technol. R&D Centre, Mitsubishi Electr. Corp., Kanagawa, Japan
Abstract :
Both low noise and low distortion characteristics are strongly desired for cellular terminal receiver application. In the case of Si-MMIC, BJT has superior feature in its low noise performance and MOSFET has it in low distortion performance. By using BJT amplifier as the 1st stage of LNA and MOSFET as the 2nd stage of LNA and a down mixer, both low noise and low distortion performance is achieved. The fabricated Si-MMIC front-end, which contains two-stage LNA and down mixer and LO amplifier, performs 3.7 dB NF, 16.7 dB conversion gain and -15.5 dBm IIP/sub 3/ with 3V/13.7 mA d.c. power and -10 dBm LO power.
Keywords :
BiCMOS analogue integrated circuits; MMIC amplifiers; MMIC mixers; UHF amplifiers; UHF integrated circuits; UHF mixers; cellular radio; electric distortion; elemental semiconductors; integrated circuit noise; land mobile radio; radio receivers; silicon; 13.7 mA; 16.7 dB; 3 V; 3.7 dB; 800 MHz; BJT first-stage; BJT/MOSFET LNA; BiCMOS process; LO amplifier; MOSFET mixer; MOSFET second-stage; Si; Si MMIC front-end; UHF; cellular terminal receiver application; down mixer; low distortion front-end; low noise low front-end; two-stage LNA; Band pass filters; BiCMOS integrated circuits; Frequency measurement; Gain measurement; MMICs; MOSFET circuits; Noise measurement; Performance gain; Power supplies; Semiconductor device measurement;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705085
