DocumentCode
186770
Title
Impact of sum of failure rates (SOFR) model on thermal design in SOC´s for next generation game consoles
Author
Maitra, K. ; Nguyen, Thin ; Langendorf, B. ; Purtell, J. ; Dixit, Sudhaker ; Chen, S. ; Liu, Nian ; Mccormack, M. ; Gannamani, R. ; Jensen, R. ; Marathe, A. ; Master, R.
Author_Institution
MSCIS, Microsoft Corp., Mountain View, CA, USA
fYear
2014
fDate
1-5 June 2014
Abstract
The SOFR model is modified for SOCs in consumer electronics applications such as game consoles for advanced logic technology nodes (~2X nm). Using a representative voltage/temperature dataset from XBOX ONE SOC operation, a quantitative measure of “degree of over-design coefficient (df)” is developed to better understand the impact of worst case reliability assumptions on thermal design. A simple analytical model is also developed to illustrate the relationship between silicon level failure rates and a system level thermal design parameter (h), or the heat transfer coefficient. The heat transfer coefficient (h) is also identified as a proxy for thermal design elements such as heat sink size, fan size and speed, which strongly influence user experience. It is thus emphasized that use of SOFR model minimizes thermal over-design, thereby improving user experience, without compromising reliability.
Keywords
computer games; consumer electronics; integrated circuit reliability; logic design; system-on-chip; SOFR model; XBOX ONE SOC operation; advanced logic technology nodes; consumer electronics applications; degree of over-design coefficient; game consoles; heat transfer coefficient; representative voltage-temperature dataset; silicon level failure rates; sum of failure rates model; system level thermal design parameter; thermal design elements; thermal over-design; worst case reliability assumptions; Equations; Heat transfer; Mathematical model; Reliability engineering; Silicon; System-on-chip; Game Consoles; Sum of failure rates (SOFR); Thermal Design; User Experience;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2014 IEEE International
Conference_Location
Waikoloa, HI
Type
conf
DOI
10.1109/IRPS.2014.6860647
Filename
6860647
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