Title :
Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers
Author :
Park, T. ; Choi, S. ; Lee, D.H. ; Yoo, J.R. ; Lee, B.C. ; Kim, J.Y. ; Lee, C.G. ; Chi, K.K. ; Hong, S.H. ; Hynn, S.J. ; Shin, Y.G. ; Han, J.N. ; Park, I.S. ; Chung, U.I. ; Moon, J.T. ; Yoon, E. ; Lee, J.H.
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co Ltd., Kiheung, South Korea
Abstract :
Nano scale body-tied FinFETs have been firstly fabricated. They have fin top width of 30 nm, fin bottom width of 61 nm, fin height of 99 nm, and gate length of 60 nm. This Omega MOSFET shows excellent transistor characteristics, such as very low subthreshold swing, Drain Induced Barrier Lowering (DIBL) of 24 mV/V, almost no body bias effect, and orders of magnitude lower I/sub SUB//I/sub D/ than planar type DRAM cell transistors.
Keywords :
MOSFET; nanotechnology; 30 nm; 60 nm; 61 nm; 99 nm; MOSFETs; Si; bulk Si wafers; drain induced barrier lowering; nanoscale FET fabrication; subthreshold swing; Etching; Fabrication; FinFETs; Ion implantation; MOSFETs; Oxidation; Random access memory; Resists; Silicon compounds; Substrates;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221122
