DocumentCode
1867708
Title
Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers
Author
Park, T. ; Choi, S. ; Lee, D.H. ; Yoo, J.R. ; Lee, B.C. ; Kim, J.Y. ; Lee, C.G. ; Chi, K.K. ; Hong, S.H. ; Hynn, S.J. ; Shin, Y.G. ; Han, J.N. ; Park, I.S. ; Chung, U.I. ; Moon, J.T. ; Yoon, E. ; Lee, J.H.
Author_Institution
Semicond. R&D Center, Samsung Electron. Co Ltd., Kiheung, South Korea
fYear
2003
fDate
10-12 June 2003
Firstpage
135
Lastpage
136
Abstract
Nano scale body-tied FinFETs have been firstly fabricated. They have fin top width of 30 nm, fin bottom width of 61 nm, fin height of 99 nm, and gate length of 60 nm. This Omega MOSFET shows excellent transistor characteristics, such as very low subthreshold swing, Drain Induced Barrier Lowering (DIBL) of 24 mV/V, almost no body bias effect, and orders of magnitude lower I/sub SUB//I/sub D/ than planar type DRAM cell transistors.
Keywords
MOSFET; nanotechnology; 30 nm; 60 nm; 61 nm; 99 nm; MOSFETs; Si; bulk Si wafers; drain induced barrier lowering; nanoscale FET fabrication; subthreshold swing; Etching; Fabrication; FinFETs; Ion implantation; MOSFETs; Oxidation; Random access memory; Resists; Silicon compounds; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
4-89114-033-X
Type
conf
DOI
10.1109/VLSIT.2003.1221122
Filename
1221122
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