DocumentCode :
1867721
Title :
High Resistance Open localization
Author :
Chen, Yen-Hao Jack ; Po Chih Huang ; Talanov, Vladimir ; Orozco, Antonio ; Gaudestad, Jan
Author_Institution :
Honyang, Zhubei, Taiwan
fYear :
2015
fDate :
June 29 2015-July 2 2015
Firstpage :
144
Lastpage :
148
Abstract :
Magnetic Field Imaging (MFI) is a widely used technique in the Semiconductor industry for non-destructive Electrical Fault Isolation (EFI) for shorts, leakages and opens. When the devices shrink and the mobile electronics industry has a more strict criteria for speed with low power consumption, making High Resistance Opens (HRO) failures more important to detect. We show in this paper two cases in which magnetic field phase analysis using MFI helped localize HRO failures that were causing delays and slower speed in addition to higher power consumption.
Keywords :
fault location; integrated circuit testing; low-power electronics; magnetic fields; nondestructive testing; optical images; power consumption; semiconductor industry; EFI; HRO failures; MFI; high resistance open localization; magnetic field imaging; magnetic field phase analysis; mobile electronics industry; nondestructive electrical fault isolation; power consumption; semiconductor industry; Imaging; Magnetic fields; RF signals; Radio frequency; Resistance; SQUIDs; Sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/IPFA.2015.7224353
Filename :
7224353
Link To Document :
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