Title :
Novel dual direction PNP with self-bias ring structure
Author :
Tsung-Che Tsai ; Jam-Wem Lee ; Ming-Fu Tsai ; Yi-Feng Chang ; Shui-Ming Cheng ; Ming-Hsiang Song
Author_Institution :
TSMC, Hsinchu, Taiwan
Abstract :
A novel voltage rating adjustable dual direction PNP ESD clamp with self-bias ring structure is proposed and demonstrated for better isolation performance in this work. In comparison to conventional structure, measurements exhibit that the latch-up (LU) immunity are enhanced by more than 2.5X, and the leakage current level is simultaneously suppressed by more than 20X.
Keywords :
electric breakdown; electrostatic discharge; integrated circuit reliability; leakage currents; technology CAD (electronics); leakage current level; self bias ring structure; voltage rating adjustable dual direction PNP ESD clamp; Clamps; Current measurement; Electrostatic discharges; Leakage currents; Structural rings; Temperature measurement; Voltage measurement; ESD; LU; TCAD; power clamp;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860655