Title :
Impact of oxygen-enriched SiN interface on Al/sub 2/O/sub 3/ gate stack. An innovative solution to low-power CMOS
Author :
Saito, S. ; Shimamoto, Y. ; Tsujikawa, S. ; Hamamura, H. ; Tonomura, O. ; Hisamoto, D. ; Mine, T. ; Torii, Kentaro ; Yugami, J. ; Hiratani, M. ; Onai, T. ; Kimura, Shunji
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A SiN dielectric with oxygen-enriched interface (OI-SiN) was applied as an interfacial layer of an Al/sub 2/O/sub 3/ stack. The OI-SiN interface, where the nitrogen profile is controlled and the fixed charge is suppressed, can solve critical issues for high-/spl kappa/ dielectrics; impurity penetration through conventional processes, and reduced mobility due to Coulomb scattering. Thus, the drivability with low-leakage current is ensured. We show a scaling strategy to integrate the OI-SiN/Al/sub 2/O/sub 3/ stack which is suitable for low-power applications.
Keywords :
CMOS integrated circuits; MISFET; alumina; dielectric materials; impurity distribution; leakage currents; silicon compounds; Coulomb scattering; SiN dielectric material; SiN interface; SiN-Al/sub 2/O/sub 3/; SiN/Al/sub 2/O/sub 3/ stack; conventional process; impurity penetration; leakage current; low power CMOS; nitrogen profile; oxygen enriched interface; suppression effect; Annealing; CMOS process; Capacitance-voltage characteristics; Dielectric substrates; High-K gate dielectrics; Impurities; Laboratories; Nitrogen; Scattering; Silicon compounds;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221127
