• DocumentCode
    1867840
  • Title

    Evaporation method to eliminate Si-Matrix interferences for thick oxide wafers VPD-ICPMS analysis

  • Author

    Hwee Hong Eng ; Lei Zhu ; Chze Wee Loh ; Si Ping Zhao ; Lam, Jeffrey

  • Author_Institution
    PTF FA Dept., GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    173
  • Lastpage
    174
  • Abstract
    Matrix interferences remain one of the biggest problems for wafer VPD-ICPMS analysis. It is reported here that a few metals such as Ti, Ni, Ga and Ge have been successfully resolved from thick SiO2 matrix interference by a new evaporation method.
  • Keywords
    etching; evaporation; integrated circuit measurement; integrated circuit testing; mass spectroscopy; surface contamination; SiO2; VPD-ICPMS analysis; evaporation method; inductively coupled plasma mass spectrometry; matrix interference elimination; metal contamination monitoring; thick oxide wafer; vapor phase decomposition process; Interference; Mass spectroscopy; Matrix decomposition; Nickel; Plasmas; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224359
  • Filename
    7224359
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1867840