Title :
Evaporation method to eliminate Si-Matrix interferences for thick oxide wafers VPD-ICPMS analysis
Author :
Hwee Hong Eng ; Lei Zhu ; Chze Wee Loh ; Si Ping Zhao ; Lam, Jeffrey
Author_Institution :
PTF FA Dept., GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
fDate :
June 29 2015-July 2 2015
Abstract :
Matrix interferences remain one of the biggest problems for wafer VPD-ICPMS analysis. It is reported here that a few metals such as Ti, Ni, Ga and Ge have been successfully resolved from thick SiO2 matrix interference by a new evaporation method.
Keywords :
etching; evaporation; integrated circuit measurement; integrated circuit testing; mass spectroscopy; surface contamination; SiO2; VPD-ICPMS analysis; evaporation method; inductively coupled plasma mass spectrometry; matrix interference elimination; metal contamination monitoring; thick oxide wafer; vapor phase decomposition process; Interference; Mass spectroscopy; Matrix decomposition; Nickel; Plasmas; Silicon;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
DOI :
10.1109/IPFA.2015.7224359
