• DocumentCode
    186788
  • Title

    Variability challenges to electromigration (EM) lifetime projections

  • Author

    Baozhen Li ; Christiansen, C. ; Filippi, R.

  • Author_Institution
    IBM Syst. & Technol. Group, Essex Junction, VT, USA
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Abstract
    Technology scaling has led to severe degradation of EM performance for advanced interconnects. On one hand, the median time to failure becomes shorter due to the reduction of critical void size and the increase of the Cu mass flow rate. On the other hand the variability increase has led to broader failure time distributions, which can be more detrimental for lifetime projections to very low percentiles at use conditions. In this paper, we present case studies to show that the failure time improvements can be overshadowed by the distribution shape factor degradation. Causes and implementations are also discussed.
  • Keywords
    copper; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; Cu; EM performance degradation; advanced interconnects; copper mass flow rate; critical void size reduction; distribution shape factor degradation; electromigration lifetime projections; failure time distributions; median time to failure; technology scaling; Barium; Degradation; Electromigration; Reliability; Resistance; Stress; Cu interconnect; distribution; electromigration; grain size; lifetime projection; variability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2014 IEEE International
  • Conference_Location
    Waikoloa, HI
  • Type

    conf

  • DOI
    10.1109/IRPS.2014.6860659
  • Filename
    6860659