DocumentCode
186788
Title
Variability challenges to electromigration (EM) lifetime projections
Author
Baozhen Li ; Christiansen, C. ; Filippi, R.
Author_Institution
IBM Syst. & Technol. Group, Essex Junction, VT, USA
fYear
2014
fDate
1-5 June 2014
Abstract
Technology scaling has led to severe degradation of EM performance for advanced interconnects. On one hand, the median time to failure becomes shorter due to the reduction of critical void size and the increase of the Cu mass flow rate. On the other hand the variability increase has led to broader failure time distributions, which can be more detrimental for lifetime projections to very low percentiles at use conditions. In this paper, we present case studies to show that the failure time improvements can be overshadowed by the distribution shape factor degradation. Causes and implementations are also discussed.
Keywords
copper; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; Cu; EM performance degradation; advanced interconnects; copper mass flow rate; critical void size reduction; distribution shape factor degradation; electromigration lifetime projections; failure time distributions; median time to failure; technology scaling; Barium; Degradation; Electromigration; Reliability; Resistance; Stress; Cu interconnect; distribution; electromigration; grain size; lifetime projection; variability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2014 IEEE International
Conference_Location
Waikoloa, HI
Type
conf
DOI
10.1109/IRPS.2014.6860659
Filename
6860659
Link To Document