DocumentCode :
1867898
Title :
SIMS characterization of isotope antimony implant for buried implant
Author :
Kian Kok Ong ; Yun Wang ; Lei Zhu ; Zhiqiang Mo ; Si Ping Zhao ; Lam, Jeffrey
Author_Institution :
GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
fYear :
2015
fDate :
June 29 2015-July 2 2015
Firstpage :
175
Lastpage :
177
Abstract :
A case study on isotope antimony for buried implant is presented in this paper. The electrical test was found to correlate to the total dopant dose instead of each isotope present at the wafer. Thus the SIMS qualification has to use sum of both isotopes 121Sb and 123Sb for dopant matching.
Keywords :
antimony; automotive electronics; SIMS; buried implant; dopant matching; electrical test; isotope antimony implant; wafer; Engines; Implants; Isotopes; Semiconductor device measurement; Standards; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/IPFA.2015.7224360
Filename :
7224360
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1867898
بازگشت