Robust HfN metal gate electrode for advanced MOS devices application

Author

Yu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C.X. ; Kwong, D.-L. ; Tung, C.H. ; Bera, K.L. ; Leo, C.J.

Author_Institution

Dept. of ECE, Nat. Univ. of Singapore, Singapore

fYear

2003

fDate

10-12 June 2003

Firstpage

151

Lastpage

152

Abstract

A comprehensive study of HfN metal gate electrode for advanced MOS devices application is presented for the first time. It is found that HfN is an excellent barrier against oxygen diffusion, has a midgap work function (4.65 eV) on SiO/sub 2/, and exhibits superior thermal stability with underlying gate dielectric. Negligible degradation in EOT, work function, leakage current, and TDDB upon high-temperature treatments (up to 1000/spl deg/C) has been observed in HfN gated MOS devices. These results suggest that HfN metal electrode is an ideal candidate for ultra thin body fully depleted SOI (FD-SOI) and symmetric double gate (SDG) MOS applications.

Keywords

MOSFET; annealing; hafnium compounds; leakage currents; silicon-on-insulator; thermal stability; work function; 1000 degC; HfN; HfN gated MOS devices; HfN metal electrode; HfN metal gate electrode; MOS devices application; equivalent oxide thickness; high-temperature treatments; leakage current; midgap work function; symmetric double gate MOS applications; thermal stability; ultra thin body fully depleted SOI; Atherosclerosis; Conductivity; Electrodes; MOS capacitors; MOS devices; Paper technology; Robustness; Semiconductor films; Surface morphology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221130

Filename

1221130