DocumentCode
1867929
Title
A novel NF/sub 3/-HDP-CVD process for STI-filling in sub-90 nm DRAM and beyond
Author
Yong-Won Cha ; Sang-Ho Rha ; Won-Jin Kim ; Kyu-Tae Na ; U-In Chung ; Joo-Tae Moon
Author_Institution
Memory Div., Samsung Electron. Co. Ltd., Gyeonggi, South Korea
fYear
2003
fDate
10-12 June 2003
Firstpage
153
Lastpage
154
Abstract
A complete filling of the shallow trench isolations (STI) in sub-90 nm DRAM is realized with the novel NF/sub 3/-HDP-CVD process. The gap-fill capability of the NF/sub 3/-HDP-CVD increased dramatically as NF/sub 3/ gas is added to the conventional SiH/sub 4//O/sub 2/ chemistry of HDP-CVD process. The effect of the NF/sub 3/-HDP-CVD processed STI is investigated by analyzing the transistor characteristics and yield in 512 M DRAM.
Keywords
DRAM chips; isolation technology; plasma CVD; transistors; 90 nm; DRAM; NF/sub 3/-high density plasma-CVD process; STI filling; SiH/sub 4//O/sub 2/ chemistry; shallow trench isolation filling; transistor; Chemical vapor deposition; Chemistry; Degradation; Dielectric materials; Noise measurement; Random access memory; Sputter etching; Sputtering; Temperature; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
4-89114-033-X
Type
conf
DOI
10.1109/VLSIT.2003.1221131
Filename
1221131
Link To Document