• DocumentCode
    1867945
  • Title

    Sample preparation DOE for the die pull test

  • Author

    Xiali Chen ; Chien, Wei-ting Kary ; Guan Zhang ; Yong Zhao ; Bo Cheng ; Zhao, Hong E.

  • Author_Institution
    Semicond. Manuf. Int. (Shanghai) Corp., Shanghai, China
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    181
  • Lastpage
    184
  • Abstract
    With the introduction of new material (e.g., ultra-low-K inter-metal dielectrics) and package technology (e.g., laser grooving), there are new challenges on product reliability, especially on environmental stress tests related to film adhesion. To better understand the impacts of these changes on field applications, a new evaluation method, the die pull (DP) test, was proposed to assess the inter-layer adhesion. The proposed DP test provides quantitative indices on wafer back-end process robustness verifications during chip-package-interaction (CPI) verifications. However, two major issues need to be fixed on the sample preparations: the low successful rate and the long cycle time. After a carefully designed DOE, we successfully achieved a high successful rate, as well as a shortened sample preparation cycle time (from > 2-day to <; 8-hr). This greatly facilitates CPI process improvements and leads to significant process enhancements in a much shorter period of time.
  • Keywords
    adhesion; design of experiments; environmental stress screening; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; DOE; chip-package-interaction verifications; cycle time; die pull test; environmental stress tests; film adhesion; inter-layer adhesion; package technology; product reliability; sample preparations; successful rate; wafer back-end process robustness verifications; Cooling; Electronic mail; Force; Manufacturing; Reliability engineering; Robustness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224362
  • Filename
    7224362