Title :
Time-dependent clustering model versus combination-based approach for BEOL/MOL and FEOL non-uniform dielectric breakdown: Similarities and disparities
Author :
Wu, E.Y. ; Baozhen Li ; Stathis, James H. ; LaRow, Charles
Author_Institution :
Syst. & Technol. Group, IBM Semicond. R&D Center, Essex Junction, VT, USA
Abstract :
Similarities and disparities between time-dependent clustering model and combination-based approach are thoroughly investigated. It is shown that two approaches can provide similar description of non-uniform dielectric breakdown provided that a dielectric system can be rigorously characterized by two random variables and input parameters verified from independent experiments as in the case of FEOL gate dielectrics. On the other hand, the notion of a single thickness for complicated dielectric systems with multiple random variables as in BEOL and MOL applications is shown to be questionable. As a result, a two-random variable combination-based approach is not necessarily correct to model non-uniform dielectric breakdown without rigorous justification. In contrast, time-dependent clustering model is based on the fundamental preservation of area scaling properties of failure percentiles and failure times, rendering a fundamentally new methodology to characterize non-uniform dielectric breakdown as technology variability issues continue to rise for modern technology nodes.
Keywords :
electric breakdown; failure analysis; pattern clustering; BEOL-MOL; FEOL gate dielectrics; FEOL nonuniform dielectric breakdown; area scaling property preservation; complicated dielectric systems; failure percentiles; failure times; front-end-of-line gate oxides; mid-of-line TDDB evaluation; technology variability; time-dependent clustering model; two-random variable combination-based approach; Data models; Dielectric breakdown; Dielectrics; Gaussian distribution; Leakage currents; Logic gates; Random variables; Clustering model; Non-uniform dielectric breakdown; Reliability; TDDB;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860662