Title :
Novel Co/Ni bi-layer salicidation for 45 nm gate technology
Author :
Wang, M.Y. ; Chang, C.W. ; Wu, C.M. ; Lin, C.T. ; Hsieh, C.H. ; Shue, W.S. ; Liang, M.S.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan
Abstract :
We present the novel concept of "bi-layer metal salicidation" by using Co/Ni stacked films, which showed better film chemical and plasma resistance than pure NiSi. NFET device performance demonstrates 5% Idsat/Ioff (100 nA) improvement and no degradation in terms of sheet resistance, junction leakage and isolation than pure NiSi. We also prove the approach can be implemented easily to manufacturing with conventional post salicide process similar to CoSi/sub 2/ for 45 nm gate technology and below.
Keywords :
MOSFET; cobalt compounds; nickel compounds; semiconductor device metallisation; thin films; 100 nA; 45 nm; 45 nm gate technology; Co/Ni bilayer salicidation; Co/Ni stacked films; CoSi-NiSi; NFET device; chemical resistance; isolation; junction leakage; plasma resistance; sheet resistance; Bonding; Chemicals; Degradation; Etching; Plasma applications; Plasma chemistry; Plasma stability; Silicides; Temperature control; Temperature distribution;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221133
