DocumentCode
1868020
Title
Quantitative analysis of the accuracy and sensitivity of strain measurements from nanobeam electron diffraction
Author
Williamson, M.J. ; van Dooren, P. ; Flanagan, J.
Author_Institution
FEI Co., Eindhoven, Netherlands
fYear
2015
fDate
June 29 2015-July 2 2015
Firstpage
197
Lastpage
200
Abstract
It is difficult to determine the accuracy of NBD measurements for several reasons including, the uncertainty in the actual value of the strain in the reference patterns, uncertainty in the strain of known reference samples due to sample preparation, and uncertainty in the algorithms used measure the reflection positions. In order to quantify the accuracy and sensitivity of NBD analysis several reflection fitting algorithms have been tested using simulated diffraction patterns and experimental data from structures of known composition.
Keywords
carrier mobility; electron diffraction; nondestructive testing; semiconductor device measurement; NBD analysis; NBD measurements; nanobeam electron diffraction; reference patterns; reflection fitting algorithms; simulated diffraction patterns; Correlation; Diffraction; Fitting; Reflection; Sensitivity; Strain; Strain measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/IPFA.2015.7224366
Filename
7224366
Link To Document