• DocumentCode
    1868020
  • Title

    Quantitative analysis of the accuracy and sensitivity of strain measurements from nanobeam electron diffraction

  • Author

    Williamson, M.J. ; van Dooren, P. ; Flanagan, J.

  • Author_Institution
    FEI Co., Eindhoven, Netherlands
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    197
  • Lastpage
    200
  • Abstract
    It is difficult to determine the accuracy of NBD measurements for several reasons including, the uncertainty in the actual value of the strain in the reference patterns, uncertainty in the strain of known reference samples due to sample preparation, and uncertainty in the algorithms used measure the reflection positions. In order to quantify the accuracy and sensitivity of NBD analysis several reflection fitting algorithms have been tested using simulated diffraction patterns and experimental data from structures of known composition.
  • Keywords
    carrier mobility; electron diffraction; nondestructive testing; semiconductor device measurement; NBD analysis; NBD measurements; nanobeam electron diffraction; reference patterns; reflection fitting algorithms; simulated diffraction patterns; Correlation; Diffraction; Fitting; Reflection; Sensitivity; Strain; Strain measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
  • Conference_Location
    Hsinchu
  • Type

    conf

  • DOI
    10.1109/IPFA.2015.7224366
  • Filename
    7224366