Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics

Author

Kerber, A. ; Cartier, E. ; Ragnarsson, L.A. ; Rosmeulen, M. ; Pantisano, L. ; Degraeve, R. ; Kim, Y. ; Groeseneken, G.

Author_Institution

Infineon Technol. AG, Leuven, Belgium

fYear

2003

fDate

10-12 June 2003

Firstpage

159

Lastpage

160

Abstract

It is shown that the inversion charge in MOSFETs can be directly measured by a variant of the charge pumping (C-P) technique in long channel devices (inversion-charge pumping (ICP)). This new technique is used to demonstrate that charge trapping and net-fixed charge in n-channel MOSFETs with SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics are not the primary cause for the strong mobility degradation.

Keywords

MOSFET; carrier mobility; charge measurement; dielectric materials; hafnium compounds; inversion layers; semiconductor device measurement; silicon compounds; SiO/sub 2/-HfO/sub 2/; SiO/sub 2//HfO/sub 2/ dual layer; charge trapping; gate dielectrics; inversion charge pumping; metal oxide semiconductor field effect transistor; mobility degradation; mobility extraction; n-channel MOSFET; Annealing; Capacitance-voltage characteristics; Charge measurement; Charge pumps; Current measurement; Dielectric measurements; FETs; Frequency; MOSFET circuits; Pulse measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221134

Filename

1221134