DocumentCode :
1868037
Title :
Junction/well stain (delineation) technique to unveil different types of implantation defects
Author :
Tze Ping Chua ; Chee Hong Chong ; Chen Tung Hung
Author_Institution :
United Microelectron. Corp. (Singapore Branch), Ltd., Singapore, Singapore
fYear :
2015
fDate :
June 29 2015-July 2 2015
Firstpage :
201
Lastpage :
204
Abstract :
Implantation is a key process in semiconductor manufacturing. However, the implantation related defects are not easily inspected by Scanning Electron Microscope, Transmission Electron Microscopy and Focused Ion Beam without chemical treatment. In this paper, implantation related defects were isolated by FA techniques and wet chemical stain technique was employed to unveil the different types of implant defects.
Keywords :
failure analysis; focused ion beam technology; ion implantation; scanning electron microscopy; transmission electron microscopy; delineation technique; failure analysis; focused ion beam; implantation defects; junction-well stain technique; scanning electron microscope; transmission electron microscopy; wet chemical stain technique; Chemicals; Failure analysis; Implants; Inspection; Random access memory; Scanning electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2015 IEEE 22nd International Symposium on the
Conference_Location :
Hsinchu
Type :
conf
DOI :
10.1109/IPFA.2015.7224367
Filename :
7224367
Link To Document :
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